Symbol. Parameter. Value. Unit. IRF IRFFP. VDS. Drain-source Voltage ( VGS = 0). V. VDGR. Drain-gate Voltage (RGS = 20 kΩ). V. VGS. IRF/IRFS are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage. IRF STMicroelectronics MOSFET N-Ch Volt 10 Amp datasheet, inventory, & pricing.
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Download datasheet Kb Share this page. Drain-Source Body Diode Characteristics. Pulse width limited by safe operating area 2. Body Diode Reverse Recovery Charge.
The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry. Safe operating area for TO Figure 3. Continuous Source-Drain Diode Current. N-channel V – 0. Thermal impedance for TO Figure 4. Vishay Intertechnology Electronic Components Datasheet.
Repetitive Avalanche Energy a. Unclamped inductive waveform Figure The TOAB package is universally datzsheet for all commercial-industrial applications at power dissipation levels to approximately 50 W. Repetitive Avalanche Current a.
Copy your embed code and put itf630 your site: All other trademarks are the property of their respective owners. Prev Next General features. Pulsed Diode Forward Current a. View PDF for Mobile. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8. Zero Gate Voltage Drain Current. Operating Junction and Storage Temperature Range.
The maximum ratings related to soldering conditions are also marked on the inner box label. The TOAB package is universally preferred for all.
Electrical characteristics Figure Body Diode Reverse Recovery Time.
IRF Datasheet, PDF – Alldatasheet
Gate charge vs gate-source voltage Figure Switching times test circuit for resistive load Figure V DS Temperature Coefficient. I SM p datashet n junction diode. Elcodis is a trademark of Elcodis Company Ltd. IRF datasheet and specification datasheet Download datasheet. This datasheet is subject to change without notice.
L S die contact. Pulsed Drain Current a.
Capacitance variations Figure IRF datasheet and specification datasheet. Static drain-source on resistance Figure Unclamped Inductive load test circuit Figure Contents Contents 1 Electrical ratings.
The low thermal resistance.
Repetitive rating; pulse dztasheet limited by maximum junction temperature see fig. These packages have a Lead-free second level interconnect.
Case-to-Sink, Flat, Greased Surface. Single Pulse Avalanche Energy b. Soldering Recommendations Peak Temperature.
Gate charge test circuit Figure Test circuit for inductive load switching and diode recovery times Figure